By Topic

Power evolution of an actively mode-locked AlGaAs semiconductor laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Experimental observation and supporting theory on the power evolution of an actively mode-locked AlGaAs semiconductor laser (SL) under increasing bias current in the modulation range of 0.7-4.0 GHz are presented. It is shown that the useful bias current range in which solitary pulses are produced is limited by the pulse advancing within the modulation cycle with increasing bias current. An increase in the bias current allows threshold conditions to occur earlier, and the pulse advances to meet these conditions. The theory generalizes the coupling of the SL to the external cavity to include all values of the facet reflectivity. This results in two types of coupling-coherent coupling, which depends on both the SL and the external cavity state, and direct coupling, which depends solely on the external cavity state. The theory allows the coupling facet reflectivity to assume any value provided that the losses of the coupled system are small

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 3 )