Referenced Items are not available for this document.
State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Omega and the effective transimpedance into a 50 Omega load is 565 Omega . The effective transimpedance-bandwidth (TZBW) product is 6.1 THz- Omega . This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6- mu m gate length and a metal-semiconductor-metal (MSM) detector with 2- mu m lines*3- mu m spacings.<
Published in:
Photonics Technology Letters, IEEE
(Volume:5
,
Issue:
3
)
Date of Publication: March 1993
- Page(s):
- 316 - 318
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4430423
- Digital Object Identifier :
- 10.1109/68.205623
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 1993
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
