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Polarization-independent field-induced absorption-coefficient variation spectrum in an InGaAs/InP tensile-strained quantum well

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3 Author(s)
Ravikumar, K.G. ; Adv. Tech. R&D Center, Chiba, Japan ; Aizawa, T. ; Yamauchi, R.

The authors report the absorption-coefficient variation of a tensile-strained InGaAs/InP quantum well measured throughout the spectral range near and away from the bandgap. They discuss the spectral absorption-coefficient variation spectra of an unstrained, a 0.15%, a 0.30%, and a 0.45% tensile-strained quantum well and show that the difference between the wavelengths of absorption-coefficient variation peaks for TE and TM modes becomes zero with 0.3% tensile strain. It is shown that this wavelength difference varies linearly with the magnitude of the strain.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 3 )