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Empirical formulas for design and optimization of 1.5 mu m InGaAs/InGaAsP strained-quantum-well lasers

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2 Author(s)
Lin, C.H. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Lo, Y.H.

The effects of strain and number of quantum wells on optical gain, differential gain, and nonlinear gain coefficient in 1.55- mu m InGaAs/InGaAsP strained-quantum-well lasers are theoretically investigated. Well-approximated empirical expressions are proposed to model these effects. Using these formulas, one can easily and accurately predict the performance of a laser diode for a given structure. Therefore, these empirical formulas are useful tools for design and optimization of strained quantum well lasers. As a general design guideline revealed from the empirical formulas, the threshold current is reduced with the compressive strain, and the modulation bandwidth is most efficiently increased with the number of wells.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 3 )