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Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition

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7 Author(s)
Lee, B.-T. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Logan, R.A. ; Kalicek, R.F., Jr. ; Sergent, A.M.
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1.3- mu m InGaAsP/InP buried heterostructure lasers were fabricated using Ch/sub 4//H/sub 2/ reactive ion etching (RIE) for mesa definition and metalorganic chemical vapor deposition for blocking laser growth. Results show that high-quality lasers can be made using RIE, with threshold current as low as 10 mA. It was also found that a slight chemical etching of the RIE mesas was necessary to obtain lasers with as high quality as those fabricated entirely by wet etching.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 3 )