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Distributed channel model for HEMT signal and noise parameters

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2 Author(s)
P. Gardner ; Univ. of Manchester Inst. of Sci. & Technol., UK ; D. K. Paul

A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 22 )