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Low-light-level photoconductivity in semi-insulating GaAs

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4 Author(s)
Nakajima, K. ; Hamamatsu Photonics, Japan ; Hirohata, T. ; Kan, H. ; Mizushima, Y.

A peculiar photoconductive property with a positive temperature coefficient in a semi-insulating GaAs photodiode is found in the room temperature range. Also, the low-light-level photoconductivity is higher than usual. The authors suggest that an ionised-impurity scattering mechanism is dominant. Theoretical responsivity is compared with the measured value.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 22 )

Date of Publication:

22 Oct. 1992

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