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IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength

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5 Author(s)
Tsaur, B.-Y. ; MIT Lincoln Lab., Lexington, MA, USA ; Weeks, M.M. ; Trubiano, R. ; Pellegrini, P.W.
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IrSi Schottky-barrier detectors were fabricated with approximately 40-AA-thick silicide electrodes formed on p-type Si substrates by in situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is approximately 10 mu m, as determined by quantum efficiency measurements.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 12 )