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Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials

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3 Author(s)
Haddara, H. ; CNRS, Inst. Nat. Polytech. de Grenoble, France ; Elewa, Tarek ; Cristoloveanu, S.

The dynamic transconductance method is generalized for depletion-mode transistors (DMTs) and used to characterize the interface trapping properties and film doping on silicon-on-insulator (SOI) structures. This method is based on an analytical model of the transconductance for static, dynamic, and high-frequency operation in the linear region.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 1 )

Date of Publication:

Jan. 1988

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