Referenced Items are not available for this document.
Time-dependent numerical simulations have been performed to investigate avalanche breakdown and surface deep-level trapping effects in GaAs MESFETs. The model is based on a combination of bipolar drift-diffusion transport, impact ionization, and a dynamic surface charging mechanism. A realistic trapping process is introduced into the surface trap model from which the spatial distribution of surface charge density is determined. The basic breakdown mechanisms, gate-bias-dependent breakdown voltages, and effects of surface charges are demonstrated. It is shown that the surface deep-level traps have a pronounced effect on the breakdown phenomenon
Published in:
Electron Devices, IEEE Transactions on
(Volume:40
,
Issue:
4
)
Date of Publication: Apr 1993
- Page(s):
- 811 - 816
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4401036
- Digital Object Identifier :
- 10.1109/16.202795
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1993
- Sponsored by :
- IEEE Electron Devices Society
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