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Avalanche breakdown and surface deep-level trap effects in GaAs MESFET's

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3 Author(s)
Li, C.-L. ; Dept. of Electron. & Electr. Eng., Leeds Univ., UK ; Barton, T.M. ; Miles, R.E.

Time-dependent numerical simulations have been performed to investigate avalanche breakdown and surface deep-level trapping effects in GaAs MESFETs. The model is based on a combination of bipolar drift-diffusion transport, impact ionization, and a dynamic surface charging mechanism. A realistic trapping process is introduced into the surface trap model from which the spatial distribution of surface charge density is determined. The basic breakdown mechanisms, gate-bias-dependent breakdown voltages, and effects of surface charges are demonstrated. It is shown that the surface deep-level traps have a pronounced effect on the breakdown phenomenon

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 4 )