Cart (Loading....) | Create Account
Close category search window
 

Numerical simulation of sidegating effect in GaAs MESFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shwu-Jing Chang ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Lee, Chien-Ping

Two-dimensional simulation of the sidegating effect in GaAs MESFETs has been performed. The result confirms that Schottky contacts on a semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFETs. The threshold behavior in the sidegating effect is found to correlate with the conduction behavior of the Schottky-i-n (sidegate) structure when the sidegate is negatively biased. Shielding and enhancement of the sidegating effect by the Schottky contacts have also been studied, and the results agree with the experimental findings. Besides, the presence of hole traps in the semi-insulating substrate is found to be essential to the sidegating effect

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 4 )

Date of Publication:

Apr 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.