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Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

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4 Author(s)
Chang, C.E. ; Dept. of Electr. Eng., California Univ., San Diego, CA, USA ; Asbeck, P.M. ; Wang, K.-C. ; Brown, E.R.

A high-speed digital logic family based on heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is proposed. The negative differential resistance of RTDs is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 4 )