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A 2-18 GHz low-noise/high-gain amplifier module

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3 Author(s)
K. B. Niclas ; Watkins-Johnson Co., Palo Alto, CA, USA ; R. R. Pereira ; A. P. Chang

The effectiveness of the two-tier matrix amplifier as a very-low-noise device with very high associated gains across multioctave frequency bands is theoretically and experimentally demonstrated. Experimental modules whose topology is based on a computer-optimized design exhibit an average noise figure of F=3.5 dB with an associated average gain of G=17.8 dB across the 2-18 GHz frequency band. These state-of-the-art results were achieved with GaAs MESFETs whose minimum noise figure is F=2.2 dB at 18 GHz and whose gate dimensions are 0.25×200 μm. The design considerations and the test results are discussed in detail

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:37 ,  Issue: 1 )