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Formation of TiSi2 and shallow junction by As+ ion-beam mixing and infrared rapid heat treatment

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5 Author(s)
Ye, M. ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Hui-Wang Lin ; Tsien, Pei-Hsin ; Zhang, J.-P.
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A technique for forming shallow junctions with low-resistance silicide contacts developed for the use in VLSI with scaled MOSFETs is discussed. The salicide (self-aligned silicide) MOSFET gate and source-drain features self-aligned refractory metal silicide and are isolated from one another even without any insulating spacer on the gate sides. A critical step in such a MOSFET fabrication process is the ion implantation through metal silicidation technique, which includes As+ ion-beam-induced titanium-silicon interface mixing and infrared rapid heat treatment to form simultaneously the n+-p junction and a high-quality TiN covered TiSi2 contact layer

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 3 )

Date of Publication:

Mar 1989

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