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DC and microwave characteristics of sub-0.1-μm gate-length planar-doped pseudomorphic HEMTs

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8 Author(s)
Pane-Chane Chao ; General Electric Co., Syracuse, NY, USA ; Shur, M.S. ; Tiberio, Richard C. ; Duh, K.H.G.
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Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using the charge-control model is given. The calculations performed using this model indicate a very high electron velocity in the device channel (3.2±0.2×107 cm/s) and clearly demonstrate the advantages of the planar-doped devices as compared to the conventional uniformly doped HEMTs. Devices with different air-bridged geometries have been fabricated to study the effect of the gate resistance on the sub-0.1-μm HEMT performance. With reduced gate resistance in the air-bridge-drain device, noise figures as low as 0.7 and 1.9 dB were measured at 18 and 60 GHz, respectively. Maximum available gains as high as 13.0 dB at 60 GHz and 9.2 dB at 92 GHz, corresponding to an fmax of 270 GHz, have also been measured in the device. Using the planar-doped pseudomorphic structure with a high gate aspect-ratio design, a noise figure of less than 2.0 dB at 94 GHz is projected based on expected further reduction in the parasitic gate and source resistances

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 3 )