Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ruden, P.P. ; Honeywell Sensors & Signal Process. Lab., Bloomington, MN, USA ; Shur, M. ; Akinwande, A.I. ; Jenkins, P.

Experimental data showing that the dependence of the gate current on the drain voltage in enhancement-mode heterostructure field-effect transistors changes qualitatively when the gate voltage is varied from below to above threshold are presented. The data lead to the conclusion that for gate voltages higher than the threshold voltage and drain voltages larger than the drain saturation voltage, most of the potential drop occurs in a small region near the drain end of the channel. The gate current is distributed along the channel so that electrons in the channel are diverted toward the gate. A model is proposed that takes into account such a distribution of the gate current along the channel. The distributive nature of the gate current leads to negative transconductance in heterostructure field-effect transistors at high gate voltages. Negative transconductance reaching -125 mS/mm in 1-μm gate devices is observed, and an equivalent circuit model is proposed that describes the dependence of the drain current on the gate voltage in good agreement with present experimental data

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 2 )