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Subquarter-micrometer gate-length p-channel and n-channel MOSFETs with extremely shallow source-drain junctions

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3 Author(s)
Miyake, Masayasu ; NTT Corp., Kanagawa, Japan ; Kobayashi, T. ; Okazaki, Y.

The fabrication of p-channel and n-channel MOSFETs with sub-quarter-micrometer n+ polysilicon gates, have been fabricated using extremely shallow source-drain (S-D) junctions, is reported p+-n junctions as shallow as 80 nm have been fabricated using preamorphization low-energy BF2 ion implantation and rapid thermal annealing, and 80-nm n+-p junctions have been fabricated using low-energy arsenic ion implantation and rapid thermal annealing. n-channel MOSFETs with 80-mm S-D junctions and 0.16-μm gate lengths have been fabricated, and a maximum transconductance of 400 mS/mm has been obtained. 51-stage n-channel enhancement-mode/enhancement-mode (E/E) ring oscillators and p-channel E/E ring oscillators with extremely shallow S-D junctions have also been obtained

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 2 )

Date of Publication:

Feb 1989

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