Cart (Loading....) | Create Account
Close category search window
 

Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Orlowski, M.K. ; Siemens AG, Munich, West Germany ; Werner, C. ; Klink, J.P.

An analytic model for high electric fields on the source side in lightly doped drain (LDD)-type MOSFETs is proposed. The present model explains consistently the dependence of the source field peak on various relevant process and device parameters. It is shown that the source peak plays a role in avalanche and hot-carrier phenomena. The model predictions are compared with the results of extensive 2-D simulations

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 2 )

Date of Publication:

Feb 1989

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.