By Topic

On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lacaita, A.L. ; Dipartimento di Elettronica, Politecnico di Milano, Italy ; Zappa, F. ; Bigliardi, Stefano ; Manfredi, M.

Spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon are reported. In order to avoid uncertainties in geometrical and physical parameters, the simplest conceivable device, an avalanching p-n junction, was used. A photon emission efficiency of 2.9×105 photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured. On the basis of these results the bremsstrahlung origin of the hot-carrier-induced light emission is critically reviewed

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 3 )