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On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices

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4 Author(s)
A. L. Lacaita ; Dipartimento di Elettronica, Politecnico di Milano, Italy ; F. Zappa ; S. Bigliardi ; M. Manfredi

Spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon are reported. In order to avoid uncertainties in geometrical and physical parameters, the simplest conceivable device, an avalanching p-n junction, was used. A photon emission efficiency of 2.9×105 photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured. On the basis of these results the bremsstrahlung origin of the hot-carrier-induced light emission is critically reviewed

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 3 )