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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

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7 Author(s)
Cressler, J.D. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Comfort, J.H. ; Crabbe, E.F. ; Patton, Gary L.
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The DC design considerations associated with optimizing epitaxial Si- and SiGe-base bipolar transistors for the 77-K environment are examined in detail. Transistors and circuits were fabricated using four different vertical profiles, three with a graded-bandgap SiGe base, and one with a Si base for comparison. All four epitaxial-base profiles yield transistors with DC properties suitable for high-speed logic applications in the 77-K environment. The differences between the low-temperature DC characteristics of Si and SiGe transistors are highlighted both theoretically and experimentally. A performance tradeoff associated with the use of an intrinsic spacer layer to reduce parasitic leakage at low temperatures and the consequent base resistance degradation due to enhanced carrier freeze-out is identified. Evidence that a collector-base heterojunction barrier effect severely degrades the current drive and transconductance of SiGe-base transistors operating at low temperatures is provided

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 3 )

Date of Publication:

Mar 1993

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