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Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

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7 Author(s)
Georgakilas, A. ; CALCE, Maryland Univ., College Park, MD, USA ; Halkias, G. ; Christou, A. ; Papavassiliou, C.
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The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (ft) of 18 GHz and maximum power cutoff frequency (fmax) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 3 )