Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (f/sub t/) of 18 GHz and maximum power cutoff frequency (f/sub max/) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration.<
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