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An analytical quasi-saturation model for vertical DMOS power transistors

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3 Author(s)
Lou, K.H. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Liu, C.M. ; Kuo, J.B.

Current analytical models for vertical DMOS power transistors do not provide accurate explanation of quasi-saturation phenomenon. An analytical quasi-saturation model for vertical DMOS power transistors considering a nonuniform electron distribution in the n-epi region is described. As verified by the PISCES results, the quasi-saturation model provides a much better explanation of DMOS quasi-saturation behaviour than the previous model

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 3 )