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Batch fabrication and operation of GaAs-AlxGa1-x As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays

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11 Author(s)
D'Asaro, L.A. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Chirovsky, L.M.F. ; Laskowski, E.J. ; Pei, S.S.
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The structure, processing, and performance of arrays of integrated field-effect transistor-self-electrooptic effects devices (FET-SEEDs) consisting of doped-channel field-effect transistors, multiple quantum-well (MQW) modulators, and p-i-n MQW detectors are discussed. The performance of the FETs and SEEDs such as gm and contrast, is equivalent to that obtained when they are made separately. Typical values are gm=80 mS/mm and contrast of 3. The largest arrays contain 128 circuits. The circuits operate at speeds as fast as 500 Mb/s, with optical input switching energy of ≈400 fJ. At 170 Mb/s, the required optical input switching energy is ≈70 fJ. This optical energy is at least a factor of 20 less than for symmetric SEEDs (S-SEEDs) with the same optical window sizes. Hence, FET-SEEDs provide superior performance compared to conventional S-SEEDs

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Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 2 )