By Topic

A model for surface recombination velocity and lifetime of semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Cole, J.V. ; Dept. of Comput. Eng., Florida Univ., Gainesville, FL, USA ; Lee, Hong H.

A simple and powerful relationship is presented for estimating the lifetime of continuous-wave (CW) diode lasers. Accelerated aging tests can directly be translated into the relationship. A model for the surface recombination velocity is developed based on the physical and chemical phenomenon governing the change of the surface recombination velocity. This model, together with a criterion for no thermal runaway developed earlier, is used to arrive at the simple relationship. The relationship provides a physical basis for estimating the lifetime

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 2 )