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Effects of strain on the high speed modulation of GaAs- and InP-based quantum-well lasers

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3 Author(s)
Y. Lam ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; J. P. Loehr ; J. Singh

A small-signal numerical analysis of pseudomorphic GaAs- and InP-based Fabry-Perot quantum-well lasers using calculated optical gain spectra with strain effects included is reported. Examination of the effect of lifetime broadening shows that the resonance frequency increases at a rate of ~250-MHz/meV reduction in the lifetime broadening for a GaAs-based strained layer laser. The modulation speed is limited by either device heating or facet damage. If the limitation is imposed by the optical power then the modulation speed increases as the laser cavity becomes shorter and the number of quantum wells increases. If the limitation is imposed by the injection current density, however, then the modulation speed decreases for the laser with shorter cavity length. The highest modulation speed is given by an optimum well number. A resonance frequency of ~16 GHz is predicted for a pseudomorphic GaAs-based laser with 30% excess In and average output power of ~5 mW

Published in:

IEEE Journal of Quantum Electronics  (Volume:29 ,  Issue: 1 )