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AlGaAs/GaAs HBT with GaInAs cap layer fabricated by multiple-self-alignment process using one mask

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6 Author(s)
Y. Ota ; Dev. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; T. Hirose ; M. Yanagihara ; A. Ryoji
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An AlGaAs/GaAs HBT has been fabricated by introducing an n+-GaInAs cap layer to reduce the emitter contact resistivity and optimising a multiple self-alignment process using one mask. The HBT has a good high-frequency performance of fT=82 GHz and fmax=120 GHz.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 9 )