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Double and triple charge pump for power IC: ideal dynamical models to an optimised design

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2 Author(s)
G. Di Cataldo ; Dipartimento Elettrico, Elettronico e Sistemistico, Catania Univ., Italy ; G. Palumbo

The authors propose an optimised design methodology for the double and triple optimised charge pump. The circuits discussed give an output voltage greater than the supply voltage and are commonly used in power IC or memory to allow the switching on of a MOS device. The theoretical models of charge pumps in the transient region are reported to obtain better knowledge of the circuits and the optimised design.<>

Published in:

IEE Proceedings G - Circuits, Devices and Systems  (Volume:140 ,  Issue: 1 )