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Silicon permeable base transistors fabricated by selective epitaxial growth

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2 Author(s)
Gruhle, A. ; Inst. of Semicond. Electron., Aachen, West Germany ; Beneking, H.

A new type of silicon PBT uses lateral selective low-pressure vapour-phase epitaxy to grow ridges with mushroom-like cross-sections leading to self-aligned gate and drain electrodes. Advantages are the lack of any etching damage encountered with etched-groove PBTs and high-temperature process compatibility. First experimental devices with bar widths of 1 mu m exhibited transconductances of 7 mS/mm.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 1 )