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Some designs and a characterisation method for GaAs operational amplifiers for switched-capacitor applications

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2 Author(s)
Toumazou, C. ; Dept. of Electr. Eng., Imperial Coll., London ; Haigh, D.G.

A differential to single-ended convertor stage suitable for N -channel depletion-mode GaAs MESFET implementation is modified to allow increased gain. This enhanced input stage is combined with two different high-gain stages to yield two operational amplifier designs suitable for switched capacitor applications. A new procedure for characterising amplifiers in terms of settling time is presented and applied to the above designs. It reveals the ultimate speed limitation for a given amplifier design and allows the MESFET gate widths to be scaled to obtain optimum settling behaviour for any given capacitative load

Published in:

Electronics Letters  (Volume:24 ,  Issue: 18 )

Date of Publication:

1 Sep 1988

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