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Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current

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5 Author(s)
Fukushima, T. ; Furukawa Electric Co. Ltd., Yokohama, Japan ; Kasukawa, A. ; Iwase, M. ; Namegaya, T.
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It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 mu m performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 mu m cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 2 )