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New method for the extraction of MOSFET parameters

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1 Author(s)
Ghibaudo, G. ; Sachs & Freeman Associates Inc., Landover, MD, USA

A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.<>

Published in:

Electronics Letters  (Volume:24 ,  Issue: 9 )