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New method for the extraction of MOSFET parameters

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1 Author(s)
Ghibaudo, G. ; Sachs & Freeman Associates Inc., Landover, MD

A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage Vt, the low field mobility μ0 and the mobility attenuation coefficient θ to be obtained

Published in:

Electronics Letters  (Volume:24 ,  Issue: 9 )