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Optical waveguide phase modulator in GaInAsP using depletion edge translation

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3 Author(s)
Maehnss, J. ; Tech. Univ., Braunschweig ; Kowalsky, W. ; Ebeling, K.J.

Under reverse bias a phase shift per unit length of up to 500°/mm is observed in a GaInAsP/InP inverted rib waveguide embedded in a double-heterostructure pin diode. The waveguides were fabricated by wet chemical etching and subsequent liquid phase epitaxy. Diodes were formed by selective Zn diffusion in the InP cladding layer. The planar structure is favourable for integration with other electronic or optoelectronic devices

Published in:

Electronics Letters  (Volume:24 ,  Issue: 9 )