Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Simulation of thermal diffusion in transistors using transmission line matrix modelling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Webb, P.W. ; Sch. of Electron. & Electr. Eng., Birmingham Univ., UK

A variety of solid-state devices are being developed for use in systems where they are required to produce pulses of microwave power at specified duty cycles. The design of these devices is interesting as they will be smaller and have less thermal capacity than an equivalent continuous-wave source generating the same microwave power. This size reduction is important as it can result in improved electrical efficiency and a higher frequency of operation. The author describes the application of transmission line matrix diffusion modelling to the transient thermal design of a transistor structure and compares the technique with finite difference and finite element approaches

Published in:

Electronics & Communication Engineering Journal  (Volume:4 ,  Issue: 6 )