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Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

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4 Author(s)
Tien, N.C. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Chen, Jianhui ; Fernandez, J.M. ; Wieder, H.H.

The fabrication, structure, and properties of unstrained modulation-doped, 1- mu m-long and 10- mu m-wide gate, field effect transistors made of In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/As/sub 0.71/As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS/mm, f/sub max/ of 56 GHz, and a gate breakdown voltage of 23.5 V.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 12 )