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Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs

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5 Author(s)
S. Cristoloveanu ; Lab. de Phys. des Composants a Semicond., Enserg, Grenoble, France ; S. M. Gulwadi ; D. E. Ioannou ; G. J. Campisi
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The characteristics of the front and back channels of 1- mu m-long SIMOX MOSFETs were measured before and after various types of periods of hot-electron stress, and a comparison between the induced degradations was made. The back channel degrades much more severely than the front channel for both partially depleted and fully depleted devices. Fully depleted MOSFETs (140-nm-thick) are favorably contrasted with partially depleted ones (300-nm-thick) as to their vulnerability to hot-carrier-induced damage. Although defects are always located at and/or near the interface of the stressed channel, they may influence the properties of the opposite channel (via interface coupling) in fully depleted MOSFETs.<>

Published in:

IEEE Electron Device Letters  (Volume:13 ,  Issue: 12 )