Referenced Items are not available for this document.
Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
11
)
Date of Publication: Nov. 1992
- Page(s):
- 587 - 589
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4306494
- Digital Object Identifier :
- 10.1109/55.192848
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1992
- Sponsored by :
- IEEE Electron Devices Society
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