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Extraction of series-resistance-independent MOS transistor model parameters

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2 Author(s)
Karlsson, P.R. ; Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden ; Jeppson, K.O.

It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 11 )