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A new method of determination of the I-V characteristics of negative differential conductance devices

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2 Author(s)
Hwu, R.J. ; Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA ; Abhyankar, A.M.

A method for mapping the complete I-V characteristic of a negative differential conductance (NDC) device has been investigated. This method employs the measurable positive differential conductance (PDC) portions of the DC I-V curve together with the measured conductances at a fixed DC bias voltage in the PDC region with different RF signal levels using a standard semiconductor analyzer. The NDC regime of the I-V curve is numerically constructed from the measured conductances at a fixed DC bias voltage in the PDC region with different signal levels using a large-signal nonlinear-circuit analysis.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 10 )