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Silicon-on-insulator approach for power IC's integrating vertical DMOS and polycrystalline silicon CMOS thin-film transistors

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5 Author(s)
Dolny, G.M. ; David Sarnoff Res. Center, Princeton, NJ, USA ; Ipri, A.C. ; Nostrand, G.E. ; Wheatley, C.F.
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A novel approach for the monolithic integration of low-voltage logic and analog control circuits with vertical-current flow power transistors is described. This is achieved by fabricating a CMOS device family, using polycrystalline-silicon thin-film transistors (TFTs), on the field oxide of a single-crystal power device. Parasitic interactions between the control and power devices are eliminated in a simple, inexpensive, and easily manufacturable process. The technology is capable of supporting both MOS and bipolar power devices and the presence of the TFT circuits places no restriction on the maximum voltage or current of the power device. The TFTs exhibit good electrical characteristics and the power devices are not compromised by the addition of the TFT control circuits. This concept is demonstrated by the fabrication of a vertical DMOS power transistor with >100-V, >45-A capability, monolithically integrated with current-limiting and temperature-limiting functions.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 10 )