InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with a carbon-doped base grown by MOCVD

InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) utilizing a carbon-doped base have been demonstrated. The devices were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using carbon tetrachloride (CCl/sub 4/) as the p-type dopant source. These devices exhibit a DC common-emitter current gain of 50 and an emitter-base junction ideality factor of 1.29 in a structure for which no undoped spacer layer was employed at the emitter-base junction. These preliminary results suggest that C-doping of In/sub 0.53/Ga/sub 0.47/As may be a suitable alternative to Zn in MOCVD-grown InP/In/sub 0.53/Ga/sub 0.47/As HBTs.<
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