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Parallel hot-carrier-induced degradation mechanisms in hydrogen-passivated polysilicon-on-insulator LDD p-MOSFET's

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6 Author(s)
Bhattacharya, S. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Kovelamudi, R. ; Batra, S. ; Banerjee, S.
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Hot-carrier-induced stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on-insulator (poly-SOI) MOSFETs by two parallel degradation mechanisms. The authors observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon lightly doped source and drain (LDD) MOSFETs exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFETs.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 9 )