Referenced Items are not available for this document.
A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
9
)
Date of Publication: Sept. 1992
- Page(s):
- 488 - 490
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4246312
- Digital Object Identifier :
- 10.1109/55.192804
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sept. 1992
- Sponsored by :
- IEEE Electron Devices Society
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