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A novel double-metal structure for voltage-programmable links

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3 Author(s)
Cohen, S.S. ; MIT Lincoln Lab., Lexington, MA, USA ; Raffel, J.I. ; Wyatt, P.W.

A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 9 )

Date of Publication:

Sept. 1992

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