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Thermoelectric infrared sensors by CMOS technology

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4 Author(s)
Lenggenhager, R. ; Phys. Electron. Lab., Inst. of Quantum Electron., Zurich, Switzerland ; Baltes, H. ; Peer, J. ; Forster, M.

The authors report two integrated thermoelectric infrared sensors on thin silicon oxide/nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V/W.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 9 )

Date of Publication:

Sept. 1992

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