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Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor

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4 Author(s)
Ikossi-Anastasiou, K. ; Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA ; Ezis, A. ; Evans, K.R. ; Stutz, C.E.

Narrow-based heterojunction bipolar transistors (NBHBTs) in the AlGaAs/GaAs material system, with a nominal base thickness of 50 AA, exhibit maximum small-signal common-emitter current gains of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded-emitter contact and a novel planar base access fabrication process. Low-temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until it saturates around 200 K, suggesting a tunneling-limited current transport mechanism.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 8 )