Referenced Items are not available for this document.
In double-level-metal CMOS production processes, the silicate-based spin-on-glass (SOG) planarization scheme, even without a nitride passivation layer, is observed to cause N-field device failure which appears to be due to positive charges trapped in the SOG sandwich layer. Ultraviolet (UV) exposure and backbias are found to be able to eliminate the field and active device leakage. A mechanism is proposed to explain the formation of the positive charges and the UV curing phenomena.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
8
)
Date of Publication: Aug. 1992
- Page(s):
- 405 - 407
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4241541
- Digital Object Identifier :
- 10.1109/55.192773
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1992
- Sponsored by :
- IEEE Electron Devices Society
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