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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:13 Issue:7 Help

Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET's with oxide and oxynitride gate dielectrics

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2 Author(s)
Joshi, A.B. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Dim-Lee Kwong

A comparative study of neutral electron-trap generation due to hot-carrier stress in n-MOSFETs with pure oxide, NH/sub 3/-nitrided oxide (RTN), and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics is reported. Results show that neutral electron trap generation is considerably suppressed by nitridation and reoxidation. The nature of neutral traps is described based on the kinetics of trap filling by electron injection into the gate dielectrics immediately after channel hot-electron stress (CHES). Improved endurance of the RTN and RTN/RTO oxides is explained using physical models related to interfacial strain relaxation.<>

Published in:
Electron Device Letters, IEEE  (Volume:13 ,  Issue: 7 )

Date of Publication: July 1992

Page(s):
360 - 362
ISSN :
0741-3106
INSPEC Accession Number:
4226619
Digital Object Identifier :
10.1109/55.192755
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
July 1992
Sponsored by :
IEEE Electron Devices Society

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