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An apparently non-quasi-static degradation behavior is found for nMOS transistors that are dynamically stressed with conditions which favor hot-hole injection. This effect can be ascribed to a post-stress effect occurring during the waiting time between the different pulses. It is shown that this effect is of importance only when a net positive charge is built up during the stress. The deviating behavior under dynamic stress conditions can be predicted based on the measurement of the post-stress effect after a static degradation.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
7
)
Date of Publication: July 1992
- Page(s):
- 357 - 359
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4226618
- Digital Object Identifier :
- 10.1109/55.192754
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1992
- Sponsored by :
- IEEE Electron Devices Society
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