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20 Gb/s digital SSIs using AlGaAs/GaAs heterojunction bipolar transistors for future optical transmission systems

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1 Author(s)
Ichino, H. ; NTT LSI Lab., Kanagawa, Japan

Design principles for achieving good eye opening and circuit optimization to extract high performance from AlGaAs/GaAs heterojunction bipolar transistor (HBT) devices are described. Using the circuit techniques and HBTs with an fT of 70 GHz and an fmax of 50 GHz, four kinds of SSIs are developed for future optical transmission systems. High-bit-rate operation of over 20 Gb/s (26 GHz toggle flip-flop, 20 Gb/s decision circuit, 20 Gb/s EXCLUSIVE OR/NOR gate, and 28 Gb/s selector IC), extremely fast rise and fall times (20-80%) of 20 and 14 ps, respectively, and good eye opening are obtained. In addition, potential performance gains that might be realized through advanced circuit and device design are appraised, and throughputs as fast as 40 Gb/s are predicted

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:28 ,  Issue: 2 )