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Very low threshold current 1.3 mu m InAsyP1-y/InP BH strained-layer quantum well laser diodes grown by MOCVD

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4 Author(s)
Kasukawa, A. ; Yokohama R&D Labs., Furukaw Electric Co. Ltd., Japan ; Iwai, N. ; Namegaya, T. ; Kikuta, T.

Very low threshold current operation of all MOCVD grown buried heterostructure 1.3 mu m InAsP/InP strained-layer double quantum well laser diodes is reported for the first time. A very low CW threshold current of 1.8 mA was obtained in a HR coated 200 mu m-long device. The maximum CW operating temperature was 120 degrees C with a characteristic temperature of 62 K in the temperature range 20-60 degrees C.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 25 )