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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:25 Help

Very low threshold current 1.3 mu m InAsyP1-y/InP BH strained-layer quantum well laser diodes grown by MOCVD

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4 Author(s)
Kasukawa, A. ; Yokohama R&D Labs., Furukaw Electric Co. Ltd., Japan ; Iwai, N. ; Namegaya, T. ; Kikuta, T.

Very low threshold current operation of all MOCVD grown buried heterostructure 1.3 mu m InAsP/InP strained-layer double quantum well laser diodes is reported for the first time. A very low CW threshold current of 1.8 mA was obtained in a HR coated 200 mu m-long device. The maximum CW operating temperature was 120 degrees C with a characteristic temperature of 62 K in the temperature range 20-60 degrees C.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 25 )

Date of Publication: 3 Dec. 1992

Page(s):
2351 - 2353
ISSN :
0013-5194
INSPEC Accession Number:
4326804
Digital Object Identifier :
10.1049/el:19921515
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
3 Dec. 1992
Sponsored by :
Institution of Engineering and Technology

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